PD Researcher, Institute for Materials Research, Tohoku University
- host researcher:
- C01 Kentaro Nomura
- 2016/04/01- (Research Group PD)
E-mail : yuya[at]imr.tohoku.ac.jp
Topological semimetals are characterized by topology of electronic band structure in the Brillouin Zone and exhibit many novel physical phenomena originating from the nontrivial electronic band structure. The experimental realization of the topological semimetals has been reported and the physical properties of the topological semimetals has been extensively investigated.
When I was a PhD student, I theoretically studied magnetic responses of graphene nanostructure and charge transport in Weyl electrons. As a result, I found many characteristic features in Dirac/Weyl electrons, which are significantly different from conventional metals and semiconductors.
My current research interests are in magnetic responses and transport phenomena in topological semimetals. Especially, I am interested in phenomena originating from the strong exchange coupling between itinerant electrons and localized magnetic moments. Because of strong spin-orbit coupling, topological semimetals exhibit interesting magnetic responses and transport phenomena. In recent our work, we found magnetic Weyl semimetal exhibit extraordinary strong magnetoresistance effect.
Topology plays a significant role in modern condensed matter physics. I’ll put all my effort to develop our research.
- B.S. in Tohoku University
- M.S. in Tohoku University
- Ph.D. in ohoku University
- PD Researcher, Institute for Materials Research, Tohoku University
SELECTION OF PUBLICATIONS
"Generation and detection of edge magnetoplasmons in a quantum Hall system using a photoconductive switch"
C. J. Lin, K. Morita, K. Muraki, and T. Fujisawa,
Japanese Journal of Applied Physics 57, 04FK02-1-4 (Feb. 2018).
"Spin fluctuations and colossal magnetoresistance in HgCr2Se4"
C. J. Lin, C. J. Yi, Y. G. Shi, L. Zhang, G. M. Zhang, J. Muller, Y. Q. Li,
Physical Review B 94, 224404-1-11 (Dec. 2016).
"Parallel field magnetoresistance in topological insulator thin films"
C. J. Lin, X. Y. He, J. Liao, X. X. Wang, V. Sacksteder IV, W. M. Yang, T. Guan, Q. M. Zhang, L. Gu, G. Y. Zhang, C. G. Zeng, X. Dai, K. H. Wu, Y. Q. Li,
Physical Review B 88, 041307(R)-1-6 (Jul. 2013).